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A94 TRANSISTOR (PNP) FEATURES SOT-89-3L High voltage MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1 2 Symbol Parameter Value Units 3 VCBO Collector-Base Voltage -400 V 1. BASE 2. COLLECTOR VCEO Collector-Emitter Voltage -400 V 3. EMITTER VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.2 A PC Collector Power Dissipation 0.5 W Tj Junction Temperature 150 Tstg Storage Temperature -55 to +150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR) CBO IC= -100A, IE=0 -400 V Collector-emitter breakdown voltage V(BR) CEO IC= -1mA,IB=0 -400 V Emitter-base breakdown voltage V(BR) EBO IE=-100A,IC=0 -5 V Collector cut-off current ICBO VCB=-400V, IE=0 -0.1 A Collector cut-off current ICEO VCE=-400V, IB=0 -5 A Emitter cut-off current IEBO VEB= -4V, IC=0 -0.1 A hFE(1) VCE=-10V, IC=-10mA 80 300 hFE(2) VCE=-10V, IC=-1mA 70 DC current gain hFE(3) VCE=-10V, IC=-100mA 60 hFE(4) VCE=-10V, IC=-50mA 80 VCE (sat) IC=-10mA, IB=-1mA -0.2 V Collector-emitter saturation voltage VCE (sat) IC=-50mA, IB=-5mA -0.3 V Base-emitter saturation voltage VBE (sat) IC=-10mA, IB