HT Semiconductor 2sa1036 free download

File name 2sa1036.pdf

2SA1 036 TRANSISTOR(PNP) SOT-23 FEATURES Large IC. ICMax.= -500 mA Low VCE(sat). Ideal for low-voltage operation. 1. BASE 2. EMITTER MARKING : HP, HQ, HR 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100A,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -32 V Emitter-base breakdown voltage V(BR)EBO IE=-100A,IC=0 -5 V Collector cut-off current ICBO VCB=-20V,IE=0 -1 A Emitter cut-off current IEBO VEB=-4V,IC=0 -1 A DC current gain hFE VCE=-3V,IC=-10mA 82 390 Collector-emitter saturation voltage VCE(sat) IC=-100mA,IB=-10mA -0.4 V Transition frequency fT VCE=-5V,IC=-20mA,f=100MHz 200 MHz Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 7 pF CLASSIFICATION OF hFE Rank P Q R Range 82 - 180 120 - 270 180 - 390 1 JinYu www.htsemi.com semicondu