HT Semiconductor 2sd2413 free download

File name 2sd2413.pdf

2SD2413 TRANSISOR (NPN) FEATURES High collector to base voltage VCBO SOT-89 High collector to emitter voltage VCEO Large collector power dissipation PC 1. BASE Low collector to emitter saturation voltage VCE(sat) 2. COLLECTOR 1 Marking:1S 2 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value Units VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 400 V Collector-emitter breakdown voltage V(BR)CEO IC=0.5mA, IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V Collector cut-off current ICBO VCB=400V, IE=0 50 A Emitter cut-off current IEBO VEB=5V, IC=0 50 A DC current gain hFE VCE=5V, IC=30mA 30 Collector-emitter saturation voltage VCE(sat) IC=50mA, IB=5mA 1.5 V Base-emitter saturation voltage VBE(sat) IC=50mA, IB=5mA 1.5 V Transition frequency fT VCE=30V, IC=20mA, f=200MHz 40 MHz Collector output capacitance Cob VCB = 30V, IE=0, f=1MHz 7 pF JinYu www.htsemi.com semiconduct