HT Semiconductor 2sc2411 free download

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2SC2411 TRANSISOR(NPN) SOT-23 1. BASE FEATURES 2. EMITTER High ICMax.ICMax. = 0.5mA 3. COLLECTOR Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1036 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 32 V Emitter-base breakdown voltage V(BR)EBO IE=100A,IC=0 5 V Collector cut-off current ICBO VCB=20V,IE=0 1 A Emitter cut-off current IEBO VEB=4V,IC=0 1 A DC current gain hFE VCE=3V,IC=100mA 82 390 Collector-emitter saturation voltage VCE(sat) IC=500mA,IB=50mA 0.4 V Transition frequency fT VCE=5V,IC=20mA,f=100MHz 250 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 6.0 pF CLASSIFICATION OF hFE Rank P Q R Range 82-180 120-270 180-390 Marking CP CQ CR JinYu www.htsemi.com semiconductor 2SC2411 JinYu www.htsemi.com semiconductor