HT Semiconductor 2sd596 free download

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2SD596 TRANSISTOR (NPN) FEATURES SOT-23 High DC Current gain. Complimentary to 2SB624 MAXIMUM RATINGS (TA=25 unless otherwise noted) 1.BASE Symbol Parameter Value Units 2.EMITTER VCBO Collector-Base Voltage 30 V 3.COLLECTOR VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 700 mA PC Collector Power Dissipation 200 mW Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 5 V Collector cut-off current ICBO VCB=30V , IE=0 0.1 A Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 A hFE(1)* VCE= 1V, IC= 100mA 110 400 DC current gain hFE(2)* VCE=1V, IC= 700mA 50 Collector-emitter saturation voltage VCE(sat) * IC=700mA, IB=70mA 0.6 V Base-emitter voltage VBE * VCE=6V, IC=10mA 0.6 0.7 V Transition frequency fT VCE=6V, IC= 10mA 170 MHz Collector Output Capacitance Cob VCB=6V,IE=0,f=10MHZ 12 pF * Pulse test : Pulse width 350s,Duty Cycle2%. CLASSIFICATION OF hFE(1) Marking DV1 DV2 DV3 DV4 DV5 Range 110-180 135-220 170-270 200-320 250-400 JinYu www.htsemi.com semiconductor JinYu www.htsemi.com semiconductor JinYu www.htsemi.com semiconductor