File name SST49LF020.pdf2 Megabit LPC Flash
SST49LF020
SST49LF0202 Mb LPC Flash
Advance Information
FEATURES:
· Standard LPC Interface Conforms to Intel LPC Interface Specification 1.0 · Organized as 256K x8 · Flexible Erase Capability Uniform 4 KByte sectors Uniform 16 KByte overlay blocks 16 KBytes Top boot block protection Chip-Erase for PP Mode · Single 3.0-3.6V Read and Write Operations · Superior Reliability Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention · Low Power Consumption Active Read Current: 10 mA (typical) Standby Current: 10 µA (typical) · Fast Sector-Erase/Byte-Program Operation Sector-Erase Time: 18 ms (typical) Block-Erase Time: 18 ms (typical) Chip-Erase Time: 70 ms (typical) Byte-Program Time: 14 µs (typical) Chip Rewrite Time: 4 seconds (typical) Single-pulse Program or Erase Internal timing generation · Two Operational Modes Low Pin Count (LPC) Interface mode for in-system operation Parallel Programming (PP) Mode for fast production programming · LPC Interface Mode 5-signal communication interface supporting byte Read and Write 33 MHz clock frequency operation WP# and TBL# pins provide hardware write protect for entire chip and/or top boot block Standard SDP Command Set Data# Polling and Toggle Bit for End-of-Write detection 5 GPI pins for system design flexibility · Parallel Programming (PP) Mode 11 pin multiplexed address and 8 pin data I/O interface Supports fast In-System or PROM programming for manufacturing · CMOS I/O Compatibility · Packages Available 32-lead PLCC 32-lead TSOP (8mm x 14mm)
PRODUCT DESCRIPTION
The SST49LF020 flash memory device is designed to interface with the LPC bus for PC and Internet Applicance applications. It provides protection for the storage and update of code and data in addition to adding system design flexibility through five General Purpose Inputs (GPI). The SST49LF020 is in compliance with Intel Low Pin Count (LPC) Interface Specification 1.0. Two interface modes are supported: LPC Mode for In-System programming and Parallel Programming (PP) Mode for fast factory programming. The SST49LF020 flash memory device is manufactured with SST's proprietary, high performance SuperFlash Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST49LF020 device significantly improves performance and reliability, while lowering power consumption. The SST49LF020 device writes (Program or Erase) with a single 3.0-3.6V power supply. It uses less energy during Erase and Program than alternative flash memory technologies. The total energy consumed is a function of the applied voltage, current and time of application. Since for any give voltage range, the SuperFlash technology uses
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less current to program and has a shorter erase time, the total energy consumed during any Erase |