samsung k9f6408u0c free download

File name ds_k9f6408u0c_rev11.pdf

K9F6408U0C FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ. Value: 8mA -->4mA 2. Package part number is modified. K9F6408U0C-Y ---> K9F6408U0C_T 3. AC parameter is changed. tRP(min.) : 30ns --> 25ns 0.2 1. TBGA package is changed. - 9mmX11mm 63ball TBGA ---> 6mmX8.5mm 48ball TBGA 2. Part number(TBGA package part number) is changed - K9F6408Q0C-D ----> K9F6408Q0C-B - K9F6408U0C-D -----> K9F6408U0C-B 3. K9F6408U0C-BCB0,BIB0 products are added 0.3 1. WSOP1 package is added. - Part number : K9F6408U0C_VCB0,VIBO 1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 28) 2. Add the data protection Vcc guidence for 1.8V device - below about 1.1V. (Page 29) The min. Vcc value 1.8V devices is changed. K9F64XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V Pb-free Package is added. K9F6408U0C-QCB0,QIB0 K9F6408U0C-HCB0,HIB0 K9F6408Q0C-HCB0,HIB0 K9F6408U0C-FCB0,FIB0 Note is added. (VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.) 1. Add the Protrusion/Burr value in WSOP1 PKG Diagram. 1. PKG(WSOP1) Dimension Change Mar. 13 . 2002 Nov. 21. 2002 Nov. 12 . 2001 Draft Date Jul. 24 . 2001 Nov. 5 . 2001 Remark Advance Preliminary 0.4 0.5 Mar. 05. 2003 0.6 Mar. 13 . 2003 0.7 Jul. 04. 2003 0.8 0.9 Apr. 24. 2004 May. 24. 2004 Note : For more detailed features and specifications including FAQ, please refer to Samsung's Flash web site. http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you. 1 K9F6408U0C FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History 1.0 1. NAND Flash Technical Notes is changed. -Invalid block -> initial invalid block ( page 13) -Error in write or read operation ( page 14 ) -Program Flow Chart ( page 14 ) 1. The flow chart to creat the initial invalid block table is changed. Draft Date Oct. 25th. 2004 Remark 1.1 May 6th. 2005 Note : For more detailed features and specifications including FAQ, please refer to Samsung's Flash web site. http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you. 2 K9F6408U0C FLASH MEMORY 8M x 8 Bit Bit NAND Flash Memory PRODUCT LIST Part Number K9F6408U0C-B,H K9F6408U0C-T,Q K9F6408U0C-V,F 2.7 ~