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GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS 4N25 4N37 DESCRIPTION The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package. 4N26 H11A1 4N27 H11A2 4N28 H11A3 4N35 H11A4 4N36 H11A5 FEATURES · UL recognized (File # E90700) · VDE recognized (File # 94766) -Add option V for white package (e.g., 4N25V-M) -Add option 300 for black package (e.g., 4N25.300) · Also available in white package by specifying -M suffix, eg. 4N25-M except H11A2, H11A4 and H11A5 1 SCHEMATIC 6 2 5 3 NC 4 APPLICATIONS · Power supply regulators · Digital logic inputs · Microprocessor inputs PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE WHITE PACKAGE (-M SUFFIX) BLACK PACKAGE (NO -M SUFFIX) 6 1 6 1 6 1 6 1 6 1 6 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Symbol TSTG TOPR TSOL PD IF VR IF(pk) PD VCEO VCBO VECO PD 1 OF 12 Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation @ TA = 25°C Derate above 25°C EMITTER DC/Average Forward Input Current Reverse Input Voltage Forward Current - Peak (300µs, 2% Duty Cycle) LED Power Dissipation @ TA = 25°C Derate above 25°C DETECTOR Collector-Emitter Voltage Collector-Base Voltage Emitter-Collector Voltage Detector Power Dissipation @ TA = 25°C Derate above 25°C 2001 Fairchild Semiconductor Corporation DS300197 7/25/01 Value -55 to +150 -55 to +100 260 for 10 sec 250 3.3 (non-M), 2.94 (-M) 100 (non-M), 60 (-M) 6 3 150 (non-M), 120 (-M) 2.0 (non-M), 1.41 (-M) 30 70 7 150 2.0 (non-M), 1.76 (-M) Units °C °C °C mW mA V A mW mW/°C V V V mW mW/°C www.fairchildsemi.com GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS 4N25 4N37 4N26 H11A1 4N27 H11A2 4N28 H11A3 4N35 H11A4 4N36 H11A5 ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.) INDIVIDUAL COMPONENT CHARACTERISTICS Parameter EMITTER Input Forward Voltage Reverse Leakage Current DETECTOR Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Dark Current Collector-Base Dark Current Capacitance Test Conditions (IF = 10 mA) (VR = 6.0 V) (IC = 1.0 mA, IF = 0) (IC = 100 µA, IF = 0) (IE = 100 µA, IF = 0) (VCE = 10 V, IF = 0) (VCB = 10 V) (VCE = 0 V, f = 1 MHz) Symbol VF IR BVCEO BVCBO BVECO ICEO ICBO CCE 8 30 70 7 Min Typ** 1.18 0.001 100 120 10 1 50 20 Max 1.50 10 Unit V µA V V V nA nA pF ISOLATION CHARACTERISTICS Characteristic Input-Output Isolation Voltage Isolation Resistance Isolation Capacitance Test Conditions (Non-'M', Black Package) (f = 60 Hz, t = 1 min) (`-M', White Package) (f = 60 Hz, t = 1 sec) (VI-O = 500 VDC) (VI-O = , f = 1 MHz) (`-M' White Package) Symbol VISO RISO CISO Min 5300 7500 1011 0.5 0.2 2 pF pF Typ** Max Units Vac(rms)* Vac(pk) Note * 5300 Vac(rms) for 1 minute equates to approximately 9000 Vac (pk) for 1 second ** Typical values at TA = 25°C www.fa