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ESM6045AV NPN DARLINGTON POWER MODULE s s s s s s HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: MOTOR CONTROL s SMPS & UPS s WELDING EQUIPMENT s ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCEV VEBO IC ICM IB I BM Pt ot T stg Tj VI SO Parameter Collector-Emitter Voltage (VBE = -5 V) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p = 10 ms) Base Current Base Peak Current (t p = 10 ms) Tot al Dissipation at T c = 25 o C Storage Temperature Max. Ope rating Junction Temperature Insulation Withstand Voltage (AC-RMS) Value 1000 450 7 72 108 8 16 250 -55 to 150 150 2500 Unit V V V A A A A W o o o VCEO(sus) Collector-Emitter Voltage (IB = 0) C C C 1/7 September 1997 ESM6045AV THERMAL DATA R thj-ca se R t hc-h Thermal Resistance Junction-case Thermal Resistance Case-heatsink With Conductive Grease Applied o Max Max 0.5 0.05 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) Symbol I CER # I CEV # I EBO # Parameter Collecto r Cut-of f Current (RBE = 5 ) Collecto r Cut-of f Current (VBE = -5) Test Conditions VCE = VCEV VCE = VCEV VCE = VCEV VCE = VCEV T j = 100 o C T j = 100 o C Min. Typ. Max. 1. 5 22 1 15 1 450 150 Tj = 100 o C T j = 100 oC T j = 100 oC 450 1.2 1.6 1.3 1.55 2.1 2.15 500 4 2.5 4.6 0.4 1.2 450 7 4 6 0. 6 2 2 2 3 V V V V V V A/µs V V µs µs µs V Unit mA mA mA mA mA V Emitter Cut-off Current VEB = 5 V (I C = 0) I C = 0.2 A L = 25 mH Vc lamp = 450 V I C = 60 A IC IC IC IC = = = = 50 50 60 60 A A A A VCE = 5 V IB IB IB IB = = = = 1A 1A 2.4 A 2.4 A VCEO(SUS) * Collecto r-Emitter Sustaining Voltage hFE V CE(sat ) DC Current Gain Collecto r-Emitter Saturation Voltage VBE( sat) diC /dt Base-Emitter Saturation Voltage Rate of Rise of On-state Collector I C = 60 A I C = 60 A IB = 2.4 A IB = 2.4 A VCC = 300 V RC = 0 tp = 3 µs I B1 = 3.6 A Tj = 100 o C VCC = 300 V R C = 5 I B1 = 3.6 A T j = 100 o C VCC = 300 V R C = 5 I B1 = 3.6 A T j = 100 o C I C = 60 A VCC = 50 V VBB = -5 V R BB = 0.3 Vc lamp = 450 V I B1 = 2.4 A L = 0. 04 mH T j = 100 o C I CW off = 72 A I B1 = 2.4 A VBB = -5 V VCC = 50 V L = 35 µH RBB = 0.3 T j = 125 o C · VCE (3 µs)· Collecto r-Emitter Dynamic Voltage · V CE (5 µs)· Collector-Emitte r Dynamic Voltage ts tf tc VCEW Storage Time Fall Time Cross-over Time Maximum Collector Emitter Voltage With ou t Snubber Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % # See test circuits in databook introduction 2/7 ESM6045AV Safe Operating Areas Thermal Impedance Derating Curve Collector-emitter Voltage Versus base-emitter Resistance Collector Emitter Saturation Voltage Base-Emitter Saturation Voltage 3/7 ESM6045AV Reverse Biased SOA Foward Biased SOA Reverse Biased AOA Forward Biased AOA Switching Times Inductive Load Switching Times Inductive Load Versus Temperature 4/7 ESM6