HT Semiconductor 2sc4375 free download

File name 2sc4375.pdf

2SC4375 SOT-89-3L TRANSISTOR (NPN) 1. BASE FEATURES Small Flat Package 2. COLLECTOR Low Collector- Emitter Saturation Voltage 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1.5 A PC Collector Power Dissipation 500 mW RJA Thermal Resistance From Junction To Ambient 250 /W Tj Junction Temperature 150 Tstg Storage Temperature -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=1mA,IC=0 5 V Collector cut-off current ICBO VCB=30V,IE=0 0.1