HT Semiconductor 2sc2883 free download

File name 2sc2883.pdf

2SC2883 TRANSISTOR (NPN) SOT-89 FEATURES Low voltage 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR 1 2 Symbol Parameter Value Units 3. EMITTER 3 VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=1mA,IC=0 5 V Collector cut-off current ICBO VCB=30V,IE=0 0.1 A Emitter cut-off current IEBO VEB=5V,IC=0 0.1 A DC current gain hFE VCE=2V,IC=0.5A 100 320 Collector-emitter saturation voltage VCE(sat) IC=1.5A,IB=30mA 2 V Base-emitter voltage VBE VCE=2V,IC=0.5A 1 V Transition frequency fT VCE=2V,IC=500mA 120 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 40 pF CLASSIFICATION OF hFE Rank O Y Range 100-200 160-320 Marking GO GY JinYu www.htsemi.com semiconductor