HT Semiconductor mmbt2907a free download

File name mmbt2907a.pdf

MMBT2907A TRANSISTPR(PNP) SOT-23 FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) 1. BASE 2. EMITTER Marking: 2F 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -600 mA PD Total Device Dissipation 250 mW RJA Thermal Resistance Junction to Ambient 500 /W TJ Junction Temperature 150 Tstg Storage Temperature -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10A,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO* IC=-10mA,IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-10A,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -20 nA Base cut-off current IEBO VCE=-3V, IC =0 -10 nA Collector cut-off current ICEX VCE=-30 V, VBE(off) =-0.5V -50 nA hFE(1) VCE=-10V,IC=-150mA 100 300 hFE(2) VCE=-10V,IC=-0.1mA 75 DC current gain hFE(3) VCE=-10V,IC=-1mA 100 hFE(4) VCE=-10V,IC=-10mA 100 hFE(5) VCE=-10V,IC=-500mA 50 VCE(sat)* IC=-150mA,IB=-15mA -0.4 V Collector-emitter saturation voltage VCE(sat)* IC=-500mA,IB=-50mA -1.6 V