HT Semiconductor 2sd874a free download

File name 2sd874a.pdf

2SD874A TRANSISTOR (NPN) FEATURES SOT-89 Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat) 1. BASE Complementary to 2SB766A MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR 1 Symbol Parameter Value Units 2 VCBO Collector-Base Voltage 60 V 3. EMITTER 3 VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10A,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=2mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=10A,IC=0 5 V Collector cut-off current ICBO VCB=20V,IE=0 0.1 A Emitter cut-off current IEBO VEB=4V,IC=0 0.1 A hFE(1) VCE=10V,IC=500mA 85 340 DC current gain hFE(2) VCE=5V,IC=1A 50 Collector-emitter saturation voltage VCE(sat) IC=500mA,IB=50mA 0.4 V Base-emitter saturation voltage VBE(sat) IC=500mA,IB=50mA 1.2 V Transition frequency fT VCE=10V,IC=50mA,f=200MHz 200 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 20 pF CLASSIFICATION OF hFE(1) Rank Q R