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2SA1 1 7 9 TRANSISTOR(PNP) SOT-23 FEATURES . High breakdown voltage 1. BASE 2. EMITTER MARKING: M 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -55 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA Pc Collector Power Dissipation 200 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10u A,IE=0 -55 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-10 u A,IC=0 -5 V Collector cut-off current ICBO VCB=-35V,IE=0 -0.1 uA Emitter cut-off current IEBO VEB=-4V,IC=0 -0.1 uA DC current gain hFE VCE=-6V,IC=-1mA 200 400 Collector-emitter saturation voltage VCE(sat) IC=-50mA,IB=-5mA -0.5 V Base -emitter saturation voltage VBE(sat) IC=-50mA,IB=-5mA -1.0 V Transition frequency fT VCE=-6V,IC=-10mA 180 MHz Collector output capacitance Cob VCB=-6V,IE=0,f=1MHz 4 pF JinYu www.htsemi.com semiconductor 2SA1 1 7 9 Typical Characteristics 2 JinYu www.htsemi.com semiconductor Date:2011/05