HT Semiconductor 2sc4215 free download

File name 2sc4215.pdf

2SC4215 TRANSISTOR (NPN) SOT-323 FEATURES Small reverse transfer capacitance: Cre= 0.55pF(typ.) Low noise figure: NF=2dB (typ.) (f=100 MHz) 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 20 mA PC Collector Power Dissipation 100 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=100A,IC=0 4 V Collector cut-off current ICBO VCB=40V,IE=0 0.1 A Emitter cut-off current IEBO VEB=4V,IC=0 0.5 A DC current gain hFE VCE=6V,IC=1mA 40 200 Collector-base time constant Cc.rbb VCE=6V,IC=1mA, f=30MHZ 25 ps Transition frequency fT VCE=6V,IC=1mA, 260 550 MHz Reverse transfer capacitance Cre VCB=10V,f=1MHz 0.55 pF Noise figure NF 2 5 dB VCC=6V,Ic=1mA,f=100MHZ Power gain Gpe 17 23 dB CLASSIFICATION OF hFE Rank R O Y Range 40-80 70-140 100-200 Marking