HT Semiconductor 2sc3930 free download

File name 2sc3930.pdf

2SC3930 TRANSISTOR (NPN) SOT-323 FEATURES For high-frequency Amplification Complementary to 2SA1532 Optimum for RF amplification of FM/AM radios High transition frequency fT 1.BASE 2.EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 30 mA PC Collector Power Dissipation 150 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC= 100A, IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 5 V Collector cut-off current ICBO VCB=10V,IE=0 0.1 A Emitter cut-off current IEBO VEB=5V,IC=0 0.1 A DC current gain hFE VCE=10V,IC=1mA 70 220 VCE=10V,IE=1mA, Transition frequency fT 150 MHz f=200MHZ Common emitter reverse transfer VCB=10V,IC=1mA, Cre 1.5 pF capacitance f=10.7MHZ Noise figure NF VCB=10V,IC=1mA, f=5MHz 4 dB Reverse transfer impedance Zrb VCB=10V,IC=1mA, f=2MHz 50 CLASSIFICATION OF hFE(1) Marking VB VC Range