HT Semiconductor 2sc3052 free download

File name 2sc3052.pdf

2SC3052 TRANSISTOR (NPN) SOT-23 FEATURES Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) 1. BASE Excellent linearity of DC forward current gain 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.2 A PC Collector Power Dissipation 150 mW TJ Junction Temperature 125 Tstg Storage Temperature -55-125 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V (BR) CBO IC = 100 A, IE=0 50 V Collector-emitter breakdown voltage V (BR) CEO IC = 100 A, IB=0 50 V Emitter-base breakdown voltage V (BR) EBO IE= 100 A, IC=0 6 V Collector cut-off current ICBO VCB= 50 V , IE=0 0.1 A Emitter cut-off current IEBO VEB= 6V , IC=0 0.1 A hFE(1) VCE= 6V, IC= 1mA 150 800 DC current gain hFE(2) VCE= 6V, IC= 0.1mA 50 Collector-emitter saturation voltage VCE (sat) IC=100mA, IB= 10mA 0.3 V Base-emitter saturation voltage VBE (sat) IC= 100mA, IB= 10mA 1 V Transition frequency fT VCE= 6V, IC= 10mA 180 MHz Collector output capacitance Cob VCE=6V, IE=0, f=1MHz 4 pF Noise figure NF VCE=6V,IE=-0.1mA, f=1KHz, RG=2K 15 dB CLASSIFICATION OF hFE(1) Rank E F G Range 150~300 250~500 400~800 Marking LE LF