HT Semiconductor 2sc4081 free download

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2SC4081 TRANSISTOR (NPN) SOT-323 FEATURES Excellent hFE linearity Complements the 2A1576A 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=50A,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=50A,IC=0 7 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 A Emitter cut-off current IEBO VEB=7V,IC=0 0.1 A DC current gain hFE(1) VCE=6V,IC=1mA 120 560 Collector-emitter saturation voltage VCE(sat) IC=50mA,IB=5mA 0.4 V Transition frequency fT VCE=12V,IC=2mA,f=30MHz 180 MHz Collector output capacitance Cob VCB12V,IE=0,f=1MHz 3.5 pF CLASSIFICATION OF hFE(1) Rank Q R S Range 120-270 180-390 270-560 Marking BQ BR BS JinYu www.htsemi.com semiconductor 2SC4081 JinYu www.htsemi.com semiconductor