Fairchild Semiconductor fdt457n free download

File name fdt457n.pdf

August 1998 FDT457N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 5 A, 30 V. RDS(ON) = 0.06 @ VGS = 10 V transistors are produced using Fairchild's proprietary, high RDS(ON) = 0.090 @ VGS = 4.5 V. cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, High density cell design for extremely low RDS(ON). provide superior switching performance. These products are well suited to low voltage, low current applications such as High power and current handling capability in a widely used notebook computer power management, battery powered surface mount package. circuits, and DC motor control. SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D D D S S D G G D S SOT-223* G G S SOT-223 (J23Z) Absolute Maximum Ratings TA = 25oC unless otherwise noted Symbol Parameter FDT457N Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage - Continuous