Fairchild Semiconductor fds8934a free download

File name fds8934a.pdf

May 1998 FDS8934A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect -4 A , -20 V, RDS(ON) = 0.055 @ VGS = -4.5 V, transistors are produced using Fairchild's proprietary, high RDS(ON) = 0.072 @ VGS = -2.5 V. cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance High density cell design for extremely low RDS(ON). and provide superior switching performance. These devices are particularly suited for low voltage applications such as High power and current handling capability in a widely notebook computer power management and other battery used surface mount package. powered circuits where fast switching, low in-line power loss, Dual MOSFET in surface mount package. and resistance to transients are needed. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D2 D2 5 4 D1 S D1 FD 4A 3 6 3 89 G2 7 2 S2 G1 8 1 SO-8 pin 1 S1 Absolute Maximum Ratings TA = 25oC unless otherwise noted Symbol Parameter FDS8934A Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage -8 V ID Drain Current - Continuous (Note 1a) -4 A - Pulsed -20 PD