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Now downloading free:Wietron 2n60p 2n60f 2n60i 2n60d

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Descr: . Electronic Components Datasheets Active components Transistors Wietron 2n60p_2n60f_2n60i_2n60d.pdf
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2N60 Surface Mount N-Channel Power MOSFET P b Lead(Pb)-Free DRAIN CURRENT 2 AMPERES Description: DRAIN SOURCE VOLTAGE 600 VOLTAGE This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts D-PAK3/(TO-251) based on half bridge topology. 2 DRAIN Features: D-PAK/(TO-252) * 2.0A, 600V,RDS(ON) =5.0 Ohms @VGS =10V * Low gate charge 1 GATE * Low Crss * Fast switching * Improved dv/dt capability 3 SOURCE TO-220 TO-220F Maximum Ratings(T A =25 C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS 30 Avalanche Current - (Note 1) I AR 2.0 Continuous Drain Current ID 2.0 A Pulsed Drain Current, TP Limited by TJMAX - (Note 1) IDM 8.0 Avalanche Energy, Single Pulsed (Note 2) E AS 140 mJ Avalanche Energy, Repetitive, Limited by TJMAX E AR 4.5 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Total Power Dissipation 2N60P(TC=25

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