Fairchild Semiconductor fdg6301n free download

File name fdg6301n.pdf

July 1999 FDG6301N Dual N-Channel, Digital FET General Description Features These dual N-Channel logic level enhancement mode 25 V, 0.22 A continuous, 0.65 A peak. field effect transistors are produced using Fairchild's RDS(ON) = 4 @ VGS= 4.5 V, proprietary, high cell density, DMOS technology. This RDS(ON) = 5 @ VGS= 2.7 V. very high density process is especially tailored to minimize on-state resistance. This device has been Very low level gate drive requirements allowing direct designed especially for low voltage applications as a operation in 3 V circuits (VGS(th) < 1.5 V). replacement for bipolar digital transistors and small Gate-Source Zener for ESD ruggedness signal MOSFETs. (>6kV Human Body Model). Compact industry standard SC70-6 surface mount package. SC70-6 SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 S2 G2 1 or 4 * 6 or 3 D1 .01 2 or 5 5 or 2 D2 G1 S1 SC70-6 3 or 6 4 or 1 * *The pinouts are symmetrical; pin 1 and 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. Absolute Maximum Ratings TA = 25