Agilent 5991-3469EN Determining Critical Stresses in Semiconductors Using ZnO Crystal & GaN Freestanding Fi free download

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Keysight Technologies On Determining Critical Stresses in Semiconductors: A Case Study on ZnO Crystal and GaN Freestanding Film Application Note Introduction heteroepitaxy results in high dislocation application note, we discuss a nanoinden- densities and a high level of post-growth tation method using spherical indentation Wide band-gap semiconductors, such as residual strain in the GaN ilm, which inevi- probes to characterize the elastic-plastic zinc oxide (ZnO) and gallium nitride (GaN) tably affects its physical properties. transition behavior and determine critical are getting a lot of attention for their failure stresses in ZnO and GaN single Similarly, single crystal ZnO - a II-VI wide crystals with (0001) orientation. Nanoin- applications in optoelectronic and power band-gap semiconductor - has received dentation using a spherical probe results devices. Single crystal GaN, a III-V wide a good amount of attention in the recent in an extended elastic deformation regime, band-gap semiconductor, has received a past due to its potential application in and a gradual transition to elastic-plastic great deal of attention in the recent past short wavelength optoelectronic devices deformation, to enable the characteriza- due to its potential for the realization of due to some advantages over the more tion of critical failure stresses. photonic devices such as laser and light popular GaN.5 For example, ZnO has a emitting diodes (LEDs) operating in the simpler crystal growth technology, which Experimental ultraviolet portion of the electromagnetic translates to a lower cost material. ZnO spectrum as well as solar-blind photo-de- The nanoindentation experiments were can also be easily etched in acids and tectors.1 Its wide band-gap, high break- carried out in a Nanoindenter G200 using alkalis, providing an opportunity of fab- down ield, and high electron saturation spherical diamond probes with tip radii 1 rication of small-scale devices. Recently, velocity also make it an attractive