Fairchild Semiconductor ndt3055 free download

File name ndt3055.pdf

May 1998 NDT3055 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 4 A, 60 V. RDS(ON) = 0.100 @ VGS = 10 V. transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high High density cell design for extremely low RDS(ON). density process is especially tailored to minimize High power and current handling capability in a widely used on-state resistance and provide superior switching surface mount package. performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed. SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D D D S S D G G D S G S SOT-223 G SOT-223* (J23Z) Absolute Maximum Ratings TA = 25oC unless otherwise noted Symbol Parameter NDT3055 Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage - Continuous