ST d10nm50n f10nm50n p10nm50n free download

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STD10NM50N STF10NM50N, STP10NM50N N-channel 500 V, 0.53 , 7 A TO-220, TO-220FP, DPAK MDmeshTM II Power MOSFET Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 2 2 STD10NM50N 1 1 TO-220FP TO-220 STF10NM50N 550 V < 0.63 7A STP10NM50N 100% avalanche tested 3 Low input capacitance and gate charge 1 Low gate input resistance DPAK Application Switching applications Figure 1. Internal schematic diagram Description This series of devices is realized with the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes Marking Packages Packaging STD10NM50N DPAK Tape and reel STF10NM50N 10NM50N TO-220FP Tube STP10NM50N TO-220 September 2010 Doc ID 16929 Rev 2 1/16 www.st.com 16 Contents STD10NM50N, STF10NM50N, STP10NM50N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuits