Fairchild Semiconductor nds355an free download

File name nds355an.pdf

January 1997 NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 N-Channel logic level enhancement mode 1.7A, 30 V, RDS(ON) = 0.125 @ VGS = 4.5 V power field effect transistors are produced using Fairchild's RDS(ON) = 0.085 @ VGS = 10 V. proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state Industry standard outline SOT-23 surface mount package resistance. These devices are particularly suited for low voltage using proprietary SuperSOTTM-3 design for superior applications in notebook computers, portable phones, PCMCIA thermal and electrical capabilities. cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small High density cell design for extremely low RDS(ON). outline surface mount package. Exceptional on-resistance and maximum DC current capability. Compact industry standard SOT-23 surface mount package. _______________________________________________________________________________ D G S Absolute Maximum Ratings T A = 25