Various AO4412 - N-Channel Enhancement Mode Field Effect Transistor free download

File name AO4412 - N-Channel Enhancement Mode Field Effect Transistor.pdf

AO4412 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4412 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON) and ultra low gate charge for ID = 8.5A (V GS = 10V) use has a fast high side switch. The source leads are RDS(ON) < 26m (VGS = 10V) separated to allow a Kelvin connection to the source, RDS(ON) < 34m (VGS = 4.5V) which may be used to bypass the source inductance.Standard product AO4412 is Pb-free (meets ROHS & Sony 259 specifications). AO4412L is a Green Product ordering option. AO4412 and AO4412L are electrically identical. D S D S D S D G D G S SOIC-8 Absolute Maximum Ratings TA=25