Fairchild Semiconductor fds5670 free download

File name fds5670.pdf

FDS5670 August 1999 FDS5670 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically 10 A, 60 V. RDS(ON) = 0.014 @ VGS = 10 V to improve the overall efficiency of DC/DC converters using RDS(ON) = 0.017 @ VGS = 6 V. either synchronous or conventional switching PWM controllers. Low gate charge. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(ON) Fast switching speed. specifications. High performance trench technology for extremely The result is a MOSFET that is easy and safer to drive low RDS(ON). (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. High power and current handling capability. D D 5 4 D D 6 3 7 2 G S 1 S 8 SO-8 S Absolute Maximum Ratings TA = 25