ST b14nm50n d14nm50n f14nm50n p14nm50n free download

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STB14NM50N, STD14NM50N STF14NM50N, STP14NM50N N-channel 500 V, 0.28 12 A MDmeshTM II Power MOSFET , in DPAK, D2PAK, TO-220 and TO-220FP Features VDSS @ RDS(on) Type ID TJmax max 3 1 STB14NM50N 2 3 DPAK 1 STD14NM50N 550 V < 0.32 12 A TO-220 STF14NM50N STP14NM50N 100% avalanche tested 3 Low input capacitance and gate charge 2 3 1 1 Low gate input resistance TO-220FP D2PAK Application Switching applications Figure 1. Internal schematic diagram Description These devices are made using the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes Marking Package Packaging STB14NM50N D2PAK Tape and reel STD14NM50N DPAK 14NM50N STF14NM50N TO-220FP Tube STP14NM50N TO-220 July 2010 Doc ID 16832 Rev 3 1/18 www.st.com 18 Contents STB14NM50N, STD