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File name: | cep35p10_ceb35p10_cef35p10.pdf [preview cep35p10 ceb35p10 cef35p10] |
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Descr: | . Electronic Components Datasheets Active components Transistors CET cep35p10_ceb35p10_cef35p10.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 30-09-2021 |
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File name cep35p10_ceb35p10_cef35p10.pdf CEP35P10/CEB35P10 CEF35P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -32A, RDS(ON) =76m @VGS = -10V. RDS(ON) =92m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. D G G G D S S CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -100 V Gate-Source Voltage VGS |
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