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File name: | 2n6800_irff330.pdf [preview 2n6800 irff330] |
Size: | 130 kB |
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Mfg: | International Rectifier |
Model: | 2n6800 irff330 🔎 |
Original: | 2n6800 irff330 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors International Rectifier 2n6800_irff330.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 03-10-2021 |
User: | Anonymous |
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File name 2n6800_irff330.pdf PD - 90432C IRFF330 REPETITIVE A ALANCHE AND dv/dt RATED V JANTX2N6800 HEXFET TRANSISTORS JANTXV2N6800 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/557 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF330 400V 1.0 3.0A The HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "State of the Art" design achieves: very low on-state resis- TO-39 tance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as volt- Features: age control, very fast switching, ease of parelleling n Repetitive Avalanche Ratings and temperature stability of the electrical parameters. n Dynamic dv/dt Rating They are well suited for applications such as switch- n Hermetically Sealed ing power supplies, motor controls, inverters, chop- n Simple Drive Requirements pers, audio amplifiers and high energy pulse circuits. n Ease of Paralleling Absolute Maximum Ratings Parameter Units ID @ VGS = 10V, TC = 25 |
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