Fairchild Semiconductor nds8958 free download

File name nds8958.pdf

July 1996 NDS8958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field N-Channel 5.3A, 30V, RDS(ON)=0.035 @ VGS=10V. effect transistors are produced using Fairchild's proprietary, P-Channel -4.0A, -30V, RDS(ON)=0.065 @ VGS=-10V. high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance High density cell design or extremely low RDS(ON). and provide superior switching performance. These devices are particularly suited for low voltage applications such as High power and current handling capability in a widely used notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, surface mount package. and resistance to transients are needed. Dual (N & P-Channel) MOSFET in surface mount package. ________________________________________________________________________________ 5 4 6 3 7 2 8 1 Absolute Maximum Ratings T A= 25