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File name: | irhf57034.pdf [preview irhf57034] |
Size: | 130 kB |
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Mfg: | International Rectifier |
Model: | irhf57034 🔎 |
Original: | irhf57034 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors International Rectifier irhf57034.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 07-10-2021 |
User: | Anonymous |
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File name irhf57034.pdf PD - 93791 RADIATION HARDENED IRHF57034 POWER MOSFET 60V, N-CHANNEL THRU-HOLE (TO-39) R5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHF57034 100K Rads (Si) 0.048 12*A IRHF53034 300K Rads (Si) 0.048 12*A IRHF54034 600K Rads (Si) 0.048 12*A IRHF58034 1000K Rads (Si) 0.060 12*A TO-39 International Rectifier's R5TM technology provides Features: high performance power MOSFETs for space appli- n Single Event Effect (SEE) Hardened cations. These devices have been characterized for n Ultra Low RDS(on) Single Event Effects (SEE) with useful performance n Neutron Tolerant up to an LET of 80 (MeV/(mg/cm2)). The combination n Identical Pre- and Post-Electrical Test Conditions of low RDS(on) and low gate charge reduces the power n Repetitive Avalanche Ratings losses in switching applications such as DC to DC n Dynamic dv/dt Ratings converters and motor control. These devices retain n Simple Drive Requirements all of the well established advantages of MOSFETs n Ease of Paralleling such as voltage control, fast switching, ease of paral- n Hermetically Sealed leling and temperature stability of electrical param- eters. Absolute Maximum Ratings Pre-Irradiation Parameter Units ID @ VGS = 12V, TC = 25 |
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