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File name: | msd1819a-rt1-d.pdf [preview msd1819a-rt1-d] |
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Descr: | . Electronic Components Datasheets Active components Transistors ON Semiconductor msd1819a-rt1-d.pdf |
Group: | Electronics > Components > Transistors |
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File name msd1819a-rt1-d.pdf MSD1819A- RT1 - General Purpose Amplifier Transistor NPN Silicon Surface Mount This NPN Silicon Epitaxial Planar Transistor is designed for general http://onsemi.com purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface COLLECTOR mount applications. 3 Features High hFE, 210 - 460 - Low VCE(sat), < 0.5 V Moisture Sensitivity Level 1 1 2 ESD Protection: Human Body Model > 4000 V BASE EMITTER Machine Model > 400 V These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant 3 1 2 MAXIMUM RATINGS (TA = 25C) Rating Symbol Value Unit SC- -70 (SOT--323) Collector-Base Voltage V(BR)CBO 60 Vdc CASE 419 STYLE 3 Collector-Emitter Voltage V(BR)CEO 50 Vdc Emitter-Base Voltage V(BR)EBO 7.0 Vdc MARKING DIAGRAM Collector Current -- Continuous IC 100 mAdc Collector Current -- Peak IC(P) 200 mAdc THERMAL CHARACTERISTICS ZR M G Characteristic Symbol Max Unit G Power Dissipation (Note 1) PD 150 mW 1 Junction Temperature TJ 150 C ZR = Device Code Storage Temperature Range Tstg --55 to |
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