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Descr: . Electronic Components Datasheets Active components Transistors ST stb25nm60nd_sti25nm60nd_stf25nm60nd_stp25nm60nd_stw25nm60nd.pdf
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STx25NM60ND N-channel 600 V, 0.13 , 21 A FDmeshTM II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features VDSS @ Type RDS(on) max ID TJMAX 3 3 3 1 2 1 2 STB25NM60ND 21 A D2PAK 1 TO-220 STI25NM60ND 21 A TO-220FP STF25NM60ND 650 V 0.16 21 A(1) STP25NM60ND 21 A STW25NM60ND 21 A 1. Limited only by maximum temperature allowed 3 12 3 2 The worldwide best RDS(on)*area amongst the 1 I2PAK TO-247 fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Figure 1. Internal schematic diagram Extremely high dv/dt and avalanche capabilities Application Switching applications Description The FDmeshTM II series belongs to the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced on- resistance and fast switching with an intrinsic fast- recovery body diode.It is therefore strongly recommended for bridge topologies, in ZVS phase-shift converters. Table 1. Device summary Order codes Marking Package Packaging STB25NM60ND 25NM60ND D

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