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File name: | 2n6762_irf430.pdf [preview 2n6762 irf430] |
Size: | 146 kB |
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Mfg: | International Rectifier |
Model: | 2n6762 irf430 🔎 |
Original: | 2n6762 irf430 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors International Rectifier 2n6762_irf430.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 24-10-2021 |
User: | Anonymous |
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File name 2n6762_irf430.pdf PD - 90336F IRF430 REPETITIVE A ALANCHE AND dv/dt RATED V JANTX2N6762 HEXFET TRANSISTORS JANTXV2N6762 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542] 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF430 500V 1.5 4.5A The HEXFETtechnology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "State of the Art" design achieves: very low on-state resis- tance combined with high transconductance; superior re- TO-3 verse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well estab- lished advantages of MOSFETs such as voltage control, Features: very fast switching, ease of paralleling and temperature n Repetitive Avalanche Ratings stability of the electrical parameters. n Dynamic dv/dt Rating They are well suited for applications such as switching n Hermetically Sealed power supplies, motor controls, inverters, choppers, audio n Simple Drive Requirements amplifiers and high energy pulse circuits. n Ease of Paralleling Absolute Maximum Ratings Parameter Units ID @ VGS = 10V, TC = 25 |
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