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File name: | fdn359an.pdf [preview fdn359an] |
Size: | 117 kB |
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Mfg: | Fairchild Semiconductor |
Model: | fdn359an 🔎 |
Original: | fdn359an 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors Fairchild Semiconductor fdn359an.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 13-11-2021 |
User: | Anonymous |
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File name fdn359an.pdf April 1999 FDN359AN N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced 2.7 A, 30 V. RDS(ON) = 0.046 @ VGS = 10 V using Fairchild Semiconductor's advanced RDS(ON) = 0.060 @ VGS = 4.5 V. PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain Very fast switching. superior switching performance. Low gate charge (5nC typical). These devices are well suited for low voltage and battery powered applications where low in-line power High power version of industry standard SOT-23 loss and fast switching are required. package. Identical pin out to SOT-23 with 30% higher power handling capability. SOT-23 SuperSOTTM -6 SuperSOTTM -8 SO-8 SOT-223 SOIC-16 D D 9A 35 S SuperSOT -3 TM G G S Absolute Maximum Ratings TA = 25oC unless other wise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage |
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