Fairchild Semiconductor nds9945 free download

File name nds9945.pdf

May 1998 NDS9945 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect 3.5 A, 60 V. RDS(ON) = 0.100 @ VGS = 10 V, transistors are produced using Fairchild's proprietary, high RDS(ON) = 0.200 @ VGS = 4.5 V. cell density, DMOS technology. This very high density process is especially tailored to provide superior switching High density cell design for extremely low RDS(ON). performance and minimize on-state resistance. These devices are particularly suited for low voltage applications High power and current handling capability in a widely such as disk drive motor control, battery powered circuits used surface mount package. where fast switching, low in-line power loss, and resistance Dual MOSFET in surface mount package. to transients are needed. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D2 5 4 D2 D1 S D1 ND 45 6 3 99 7 2 G2 S2 G1 8 1 SO-8 pin 1 S1 Absolute Maximum Ratings TA = 25oC unless other wise noted Symbol Parameter NDS9945 Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage