Fairchild Semiconductor ndp5060l ndb5060l free download

File name ndp5060l_ndb5060l.pdf

October 1996 NDP5060L / NDB5060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power 26 A, 60 V. RDS(ON) = 0.05 @ VGS= 5 V field effect transistors are produced using Fairchild's RDS(ON) = 0.035 @ VGS= 10 V. proprietary, high cell density, DMOS technology. This Critical DC electrical parameters specified at elevated very high density process has been especially tailored temperature. to minimize on-state resistance, provide superior switching performance, and withstand high energy Rugged internal source-drain diode can eliminate the need pulses in the avalanche and commutation modes. for an external Zener diode transient suppressor. These devices are particularly suited for low voltage 175