International Rectifier irhf57133se free download

File name irhf57133se.pdf

PD - 94334A RADIATION HARDENED IRHF57133SE POWER MOSFET 130V, N-CHANNEL THRU-HOLE (TO-39) 4# c TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHF57133SE 100K Rads (Si) 0.1 10.5A TO-39 TM International Rectifier's R5 technology provides Features: high performance power MOSFETs for space appli- n Single Event Effect (SEE) Hardened cations. These devices have been characterized for n Ultra Low RDS(on) Single Event Effects (SEE) with useful performance n Neutron Tolerant up to an LET of 80 (MeV/(mg/cm2)). The combination n Identical Pre- and Post-Electrical Test Conditions of low RDS(on) and low gate charge reduces the power n Repetitive Avalanche Ratings losses in switching applications such as DC to DC n Dynamic dv/dt Ratings converters and motor control. These devices retain n Simple Drive Requirements all of the well established advantages of MOSFETs n Ease of Paralleling such as voltage control, fast switching, ease of paral- n Hermetically Sealed leling and temperature stability of electrical param- eters. Absolute Maximum Ratings Pre-Irradiation Parameter Units ID @ VGS = 12V, TC = 25