Fairchild Semiconductor nds336p free download

File name nds336p.pdf

June 1997 NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 P-Channel logic level enhancement mode power -1.2 A, -20 V, RDS(ON) = 0.27 @ VGS= -2.7 V field effect transistors are produced using Fairchild's RDS(ON) = 0.2 @ VGS = -4.5 V. proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state Very low level gate drive requirements allowing direct resistance. These devices are particularly suited for low voltage operation in 3V circuits. VGS(th) < 1.0V. applications such as notebook computer power management, Proprietary package design using copper lead frame for portable electronics, and other battery powered circuits where superior thermal and electrical capabilities. fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. Compact industry standard SOT-23 surface Mount package. ________________________________________________________________________________ D G S Absolute Maximum Ratings T A = 25