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STP16NE06L STP16NE06L/FP N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZETM POWER MOSFET TARGET DATA TYPE ST P16NE06L ST P16NE06LFP s s s s s s V DSS 60 V 60 V R DS(on) < 0.12 < 0.12 ID 16 A 11 A TYPICAL RDS(on) = 0.09 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175oC OPERATING TEMPERATURE HIGH dV/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION TO-220 1 2 3 1 2 3 DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID IDM (·) P t ot V ISO dV/dt T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating F actor Insulation W ithstand Voltage (DC) Peak Diode Recovery voltage slope Storage Temperature Max. O perating Junction Temperature o o o TO-220FP INTERNAL SCHEMATIC DIAGRAM Value ST P16NE06L STP16NE06LF P 60 60 ± 15 16 10 64 60 0.4 6 -65 to 175 175 ( 1) ISD 16 A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX Un it V V V 11 7 64 30 0.2 2000 A A A W W/ C V V/ns o o o C C (·) Pulse width limited by safe operating area October 1997 1/7 STP16NE06L/FP THERMAL DATA T O-220 R t hj-ca se R t hj- amb R thc- si nk Tl Thermal Resistance Junction-case Max 2.5 62.5 0.5 300 T O-220F P 5 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symb ol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, < 1%) Single Pulse Avalanche Energy o (starting Tj = 25 C, ID = I AR , V DD = 25 V) Max Valu e 16 80 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symb ol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Cond ition s I D = 250 µA VGS = 0 Min. 60 1 10 ж 100 Typ . Max. Un it V µA µA nA V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (V DS = 0) V GS = ± 15V T c = 125 o C ON () Symb ol V GS(th) R DS( on) Parameter Gate T hreshold Voltage V DS = VGS Static Drain-source On Resistance On State Drain Current V GS = 5V V GS = 10V Test Cond ition s ID = 250 µA ID = 8 A ID = 8 A 16 Min. 2 Typ . 3 0.090 Max. 4 0.12 Un it V ID(o n) V DS > I D(on) x R DS(on) max V GS = 10 V A DYNAMIC Symb ol g fs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Cond