FAIRCHILD SEMICONDUCTOR 4N25 4N26 4N27 4N28 4N35 4N36 free download

File name 4N25_GENERAL PURPOSE 6-PIN_Phototransistor.pdf

GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS 4N25 4N37 4N26 H11A1 4N27 H11A2 4N28 H11A3 4N35 H11A4 SCHEMATIC 1 6 4N36 H11A5 WHITE PACKAGE (-M SUFFIX) 6 1 6 2 5 3 NC 4 1 6 1 PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE BLACK PACKAGE (NO -M SUFFIX) 6 1 6 1 6 1 DESCRIPTION The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package. FEATURES · Also available in white package by specifying -M suffix, eg. 4N25-M · UL recognized (File # E90700) · VDE recognized (File # 94766) - Add option V for white package (e.g., 4N25V-M) - Add option 300 for black package (e.g., 4N25.300) APPLICATIONS · Power supply regulators · Digital logic inputs · Microprocessor inputs © 2002 Fairchild Semiconductor Corporation Page 1 of 13 6/6/02 GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS 4N25 4N37 4N26 H11A1 4N27 H11A2 4N28 H11A3 4N35 H11A4 4N36 H11A5 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation @ TA = 25°C Derate above 25°C EMITTER DC/Average Forward Input Current Reverse Input Voltage Forward Current - Peak (300µs, 2% Duty Cycle) LED Power Dissipation @ TA = 25°C Derate above 25°C DETECTOR Collector-Emitter Voltage Collector-Base Voltage Emitter-Collector Voltage Detector Power Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VECO PD 30 70 7 150 2.0 (non-M), 1.76 (-M) V V V mW mW/°C IF VR IF(pk) PD 100 (non-M), 60 (-M) 6 3 150 (non-M), 120 (-M) 2.0 (non-M), 1.41 (-M) mA V A mW mW/°C TSTG TOPR TSOL PD -55 to +150 -55 to +100 260 for 10 sec 250 3.3 (non-M), 2.94 (-M) °C °C °C mW Symbol Value Units © 2002 Fairchild Semiconductor Corporation Page 2 of 13 6/6/02 GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS 4N25 4N37 4N26 H11A1 4N27 H11A2 4N28 H11A3 4N35 H11A4 4N36 H11A5 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) INDIVIDUAL COMPONENT CHARACTERISTICS Parameter EMITTER Input Forward Voltage Reverse Leakage Current DETECTOR Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Dark Current Collector-Base Dark Current Capacitance (IC = 1.0 mA, IF = 0) (IC = 100 µA, IF = 0) (IE = 100 µA, IF = 0) (VCE = 10 V, IF = 0) (VCB = 10 V) (VCE = 0 V, f = 1 MHz) BVCEO BVCBO BVECO ICEO ICBO CCE 8 30 70 7 100 120 10 1 50 20 V V V nA nA pF (IF = 10 mA) (VR = 6.0 V) VF IR 1.18 0.001 1.50 10 V µA Test Conditions Symbol Min Typ* Max Unit ISOLATION CHARACTERISTICS Characteristic Input-Output Isolation Voltage Isolation Resistance Isolation Capacitance Test Conditions Symbol (Non `-M', Black Package) (f = 60 Hz, t = 1 min) (`-M', White Package) (f = 60 Hz, t = 1 sec) (VI-O = 500 VDC) (VI-O = &, f = 1 MHz) (`-M' White Package) VISO RISO CISO Min 5300 7500 1011 0.5 0.2 2 Typ* Max Units Vac(rms) Vac(pk) pF pF Not