sharp dv6340 free download

File name 486486.pdf

KSH13003 KSH13003 High Voltage Power Transistor D-PACK for Surface Mount Applications · · · · High speed Switching Suitable for Switching Regulator Motor Control Straight Lead (I.PACK, I Suffix) Lead Formed for Surface Mount Applications (No Suffix) 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 700 400 9 1.5 3 0.75 40 150 - 65 ~ 150 Units V V V A A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) IEBO hFE VCE(sat) Parameter * Collector-Emitter Breakdown Voltage Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage Test Condition IC = 5mA, IB = 0 VEB = 9V, IC = 0 VCE = 2V, IC = 0.5A VCE = 2V, IC = 1A IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.25A IC = 1.5A, IB = 0.5A IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.25A VCB = 10V, f = 0.1MHz VCE = 10V, IC = 0.1A VCC = 125V, IC = 1A IB1 = 0.2A, IB2 = - 0.2A 4 1.1 4.0 0.7 21 8 5 Min. 400 Typ. Max. 10 40 0.5 1 3 1 1.2 V V V V V pF MHz µs µs µs Units V µA VBE(sat) Cob fT tON tSTG tF * Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn ON time Storage time Fall Time * Pulse Test: Pulse Width=5ms, Duty Cycle10% ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSH13003 Typical Characteristics 2.0 1.8 100 VCE =2V A A 00m =450m IB=400mA IB IB=350mA IC[A], COLLECTOR CURRENT 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 IB=300mA IB=250mA hFE, DC CURRENT GAIN I B=5 IB=200mA IB=150mA 10 IB=100mA IB=50mA 1 IB=0mA 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.1 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 10 VBE(sat),VCE(sat)[V], SATURATION VOLTAGE IC=4IB tstg 1 VBE(sat) 1 tstg,tf[uS], TIME tf VCE(sat) 0.1 0.1 0.01 0.01 0.01 0.1 1 10 0.1 1 IC[A], COLLECTOR CURRENT IB[A], BASE CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Switching Time 10 50 IC MAX. (PLUSE) IC[A], COLLECTOR CURRENT 10 uS 5m S 1 S 00u S 45 IC MAX.(DC) 1 PD[W], POWER DISSIPATION 1000 1m 40 35 30 25 20 15 10 5 0.1 0.01 1 10 100 0 0 25 50 o 75 100 125 150 175 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSH13003 Package Demensions D-PAK 6.60 ±0.20 5.34 ±0.30 (0.50) (4.34) (0.50) 0.70 ±0.20 2.30 ±0.10 0.50 ±0.10 0.60 ±0.20 6.10 ±0.20 2.70 ±0.20 9.50 ±0.30 0.91 ±0.10 0.80 ±0.20 MAX0.96 2.30TYP [2.30±0.20] 0.76 ±0.10 2.30TYP [2.30±0.20] 0.89 ±0.10 0.50 ±0.10 1.02 ±0