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STP60NF06 STP60NF06FP N-CHANNEL 60V - 0.014 - 60A TO-220/TO-220FP STripFETTM POWER MOSFET TYPE STP60NF06 STP60NF06FP s s s s VDSS 60 V 60 V RDS(on) < 0.016 < 0.016 ID 60A 60A TYPICAL RDS(on) = 0.014 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION TO-220 3 1 2 1 2 3 TO-220FP DESCRIPTION This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements. APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL s AUTOMOTIVE INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) VISO Tstg Tj January 2002 Parameter STP60NF06 Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature -­65 to 175 (1) I SD 60A, di/dt400 A/µs, VDD 24V, TjTjMAX Value STP60NF06FP 60 60 ± 20 60 42 240 110 0.73 4 2500 37 26 148 42 0.28 Unit V V V A A A W W/°C V/ns V °C (q) Pulse width limited by safe operating area 1/9 STP60NF06 - STP60NF06FP THERMAL DATA TO-220 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.36 62.5 300 TO-220FP 3.57 °C/W °C/W °C Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 30 V) Max Value 30 360 Unit A mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 20V Min. 60 1 10 ±100 Typ. Max. Unit V µA µA nA ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250µA VGS = 10V, ID = 30 A Min. 2 0.014 Typ. Max. 4 0.016 Unit V DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS =15V , ID = 30 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 20 1810 360 125 Max. Unit S pF pF pF 2/9 STP60NF06 - STP60NF06FP ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain C