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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2139 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2139 is N-Channel Power MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2 FEATURES · Low On-Resistance 15.0±0.3 RDS(on) = 1.5 MAX. (VGS = 10 V, ID = 2.5 A) · Low Ciss Ciss = 930 pF TYP. · High Avalanche Capability Ratings · Isolate TO-220 (MP-45F) Package ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 °C) Total Power Dissipation (TA = 25 °C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW 10 µs, Duty Cycle 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 600 ±30 ±5.0 ±20 35 2.0 150 5.0 8.3 V V A A W W °C 3±0.1 4±0.2 0.7±0.1 2.54 1.3±0.2 1.5±0.2 2.54 13.5MIN. 12.0±0.2 2.5±0.1 0.65±0.1 1. Gate 2. Drain 3. Source ­55 to +150 °C A mJ 1 2 3 MP-45F (ISOLATED TO-220) Drain ** Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0 Body Diode Gate Source Document No. TC-2512 (O. D. No. TC-8071) Date Published January 1995 P Printed in Japan © 1995 2SK2139 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC Drain to Source On-state Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS(on) VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 930 200 40 20 10 60 12 30 6.0 15 1.0 320 1.4 2.5 1.5 100 ±100 MIN. TYP. 1.1 MAX. 1.5 3.5 UNIT V S TEST CONDITIONS VGS = 10 V, ID = 2.5 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 2.5 A VDS = 600 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz VGS = 10 V VDD = 150 V ID = 2.5 A, RG = 10 RL = 60 VGS = 10 V ID = 5.0 V VDD = 450 V IF = 5.0 A, VGS = 0 IF = 5.0 A di/dt = 50 A/µs µA nA pF pF pF ns ns ns ns nC nC nC V ns µC Test Circuit 1 Avalanche Capability D.U.T. RG = 25 PG VGS = 20 - 0 V 50 Test Circuit 2 Switching Time D.U.T. L VDD PG. RG RG = 10 RL VGS Wave Form VGS 0 10 % VGS (on) 90 % VDD ID 90 % 90 % ID D Wave Form BVDSS IAS ID VDD VDS VGS 0 t t = 1us Duty Cycle 1 % I 0 10 % td (on) ton tr td (off) toff 10 % tf Starting Tch Test Circuit 3 Gate Charge D.U.T. IG = 2 mA PG. 50 RL VDD The application circuits and their parameters are for references only and are not intended for use in actual design-in's. 2 2SK2139 TYPICAL CHARACTERISTICS (TA = 25 °C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 80 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 80 60 60