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File name transistor bcx51.pdf

PNP Silicon AF Transistors BCX 51 ... BCX 53 Features For AF driver and output stages q High collector current q Low collector-emitter saturation voltage q Complementary types: BCX 54 ... BCX 56 (NPN) q Type BCX 51 BCX 51-10 BCX 51-16 BCX 52 BCX 52-10 BCX 52-16 BCX 53 BCX 53-10 BCX 53-16 Marking AA AC AD AE AG AM AH AK AL Ordering Code (tape and reel) Q62702-C1847 Q62702-C1831 Q62702-C1857 Q62702-C1743 Q62702-C1744 Q62702-C1900 Q62702-C905 Q62702-C1753 Q62702-C1502 Pin Configuration 1 2 3 B C E Package1) SOT-89 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 04.96 BCX 51 ... BCX 53 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS Symbol BCX 51 VCE0 VCB0 VEB0 IC ICM IB IBM Tj Tstg 45 45 5 Values BCX 52 60 60 5 1 1.5 100 200 1 150 Unit BCX 53 80 100 5 A mA W °C V Total power dissipation, TS = 130 °C Ptot ­ 65 ... + 150 75 20 K/W 1) Package mounted on epoxy pcb 40 mm Ч 40 mm Ч 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BCX 51 ... BCX 53 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCX 51 BCX 52 BCX 53 Collector-base breakdown voltage IC = 100 µA BCX 51 BCX 52 BCX 53 Emitter-base breakdown voltage IE = 10 µA Collector cutoff current VCB = 30 V VCB = 30 V, TA = 150 °C Emitter cutoff current VEB = 4 V DC current gain1) IC = 5 mA, VCE = 2 V IC = 150 mA, VCE = 2 V BCX 51, BCX 52, BCX 53 BCX 51-10, BCX 52-10, BCX 53-10 BCX 51-16, BCX 52-16, BCX 53-16 IC = 500 mA, VCE = 2 V Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA Base-emitter voltage1) IC = 500 mA, VCE = 2 V AC characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 20 MHz fT ­ 125 ­ MHz V(BR)CE0 45 60 80 V(BR)CB0 45 60 100 V(BR)EB0 ICB0 ­ ­ IEB0 hFE 25 40 63 100 25 VCEsat VBE ­ ­ ­ ­ 100 160 ­ ­ ­ ­ 250 160 250 ­ 0.5 1 V ­ ­ ­ ­ 100 20 20 nA µA Values typ. max. Unit V ­ ­ ­ ­ ­ ­ ­ ­ ­ ­ ­ ­ ­ ­ 5 nA ­ 1) Pulse test: t 300 µs, D = 2 %. Semiconductor Group 3 BCX 51 ... BCX 53 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector current IC = f (VBE) VCE = 2 V Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 10 V Semiconductor Group 4 BCX 51 ... BCX 53 DC current gain hFE = f (IC) VCE = 2 V Collector-emitter saturation voltage IC = f (VCEsat) hFE = 10 Collector cutoff current ICB0 = f (TA) VCB = 30 V Base-emitter saturation voltage IC = f (VBEsat) hFE = 10 Semiconductor Group 5