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File name 1n5245b.pdf

1N5221B to 1N5267B Vishay Semiconductors Small Signal Zener Diodes Features · Silicon Planar Power Zener Diodes · Standard Zener voltage tolerance is ± 5 % e2 · These diodes are also available in MiniMELF case with the type designation TZM5221 ... TZM5267, SOT23 case with the type designations MMBZ5225 ... MMBZ5267 and SOD123 case with the types designations MMSZ5225 ... MMSZ5267 · Lead (Pb)-free component · Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 94 9367 Applications · Voltage stabilization Mechanical Data Case: DO35 Glass case Weight: approx. 125 mg Cathode Band Color: black Packaging codes/options: TAP/10 k per Ammopack (52 mm tape), 30 k/box TR/10 k per 13" reel, 30 k/box Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Power dissipation Z-current Test condition TL 25 °C Symbol Ptot IZ Value 500 Ptot/VZ Unit mW mA Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Junction temperature Storage temperature range Test condition Symbol RthJA Tj Tstg Value 300 175 - 65 to + 175 Unit K/W °C °C Thermal resistance junction to ambient air l = 4 mm, TL = constant Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Test condition IF = 200 mA Symbol VF Min Typ. Max 1.1 Unit V Document Number 85588 Rev. 1.7, 23-Mar-07 www.vishay.com 1 1N5221B to 1N5267B Vishay Semiconductors Electrical Characteristics 1N5221B...1N5267B Partnumber Nominal Zener Voltage1) at IZT, VZ V 1N5221B 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 1N5232B 1N5233B 1N5234B 1N5235B 1N5236B 1N5237B 1N5238B 1N5239B 1N5240B 1N5241B 1N5242B 1N5243B 1N5244B 1N5245B 1N5246B 1N5247B 1N5248B 1N5249B 1N5250B 1N5251B 1N5252B 1N5253B 1N5254B 1N5255B 1N5256B 1N5257B 1N5258B 1N5259B 1N5260B 1N5261B 1N5262B 1N5263B 1N5264B 2.4 2.5 2.7 2.8 3 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 36 39 43 47 51 56 60 IZT mA 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 9.5 9 8.5 7.8 7.4 7 6.6 6.2 5.6 5.2 5 4.6 4.5 4.2 3.8 3.4 3.2 3 2.7 2.5 2.2 2.1 Test Current Maximum Dynamic Impedance1) ZZT at IZT 30 30 30 30 29 28 24 23 22 19 17 11 7 7 5 6 8 8 10 17 22 30 13 15 16 17 19 21 23 25 29 33 35 41 44 49 58 70 80 93 105 125 150 170 Maximum Dynamic Impedance ZZK at IZK = 0.25 mA 1200 1250 1300 1400 1600 1600 1700 1900 2000 1900 1600 1600 1600 1000 750 500 500 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 700 700 800 900 1000 1100 1300 1400 Typical Temperature of Coeffizient at IZT (%/K) - 0.085 - 0.085 - 0.080 - 0.080 - 0.075 - 0.070 - 0.065 - 0.060 + 0.055 + 0.030 + 0.030 + 0.038 + 0.038 + 0.045 + 0.050 + 0.058 + 0.062 + 0.065 + 0.068 + 0.075 + 0.076 + 0.077 + 0.079 + 0.082 + 0.082 + 0.083 + 0.084 + 0.085 + 0.086 + 0.086 + 0.087 + 0.088 + 0.089 + 0.090 + 0.091 + 0.091 + 0.092 + 0.093 + 0.094 + 0.095 + 0.095 + 0.096 + 0.096 + 0.097 Maximum Revers

File name 2N5401.pdf

2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 E SOT-23 Mark: 2L B PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter Voltage TA = 25°C unless otherwise noted Parameter Value 150 160 5.0 600 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics Symbol PD RJC RJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N5401 625 5.0 83.3 200 Max *MMBT5401 350 2.8 357 Units mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2001 Fairchild Semiconductor Corporation 2N5401/MMBT5401, Rev A 2N5401 / MMBT5401 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current IC = 1.0 mA, IB = 0 IC = 100 µA, IE = 0 IE = 10 µA, IC = 0 VCB = 120 V, IE = 0 VCB = 120 V, IE = 0, TA = 100°C VEB = 3.0 V, IC = 0 150 160 5.0 50 50 50 V V V nA µA nA ON CHARACTERISTICS* hFE DC Current Gain IC = 1.0 mA, VCE = 5.0 V IC = 10 mA, VCE = 5.0 V IC = 50 mA, VCE = 5.0 V IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 50 60 50 240 0.2 0.5 1.0 1.0 V V V V VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS fT Cobo NF Current Gain - Bandwidth Product Output Capacitance Noise Figure IC = 10 mA, VCE = 10 V, f = 100 MHz VCB = 10 V, IE = 0, f = 1.0 MHz IC = 250 µA, VCE = 5.0 V, RS = 1.0 k, f = 10 Hz to 15.7 kHz 100 300 6.0 8.0 MHz pF dB 3 *Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0% NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors. Spice Model PNP (Is=21.48f Xti=3 Eg=1.11 Vaf=100 Bf=132.1 Ne=1.375 Ise=21.48f Ikf=.1848 Xtb=1.5 Br=3.661 Nc=2 Isc=0 Ikr=0 Rc=1.6 Cjc=17.63p Mjc=.5312 Vjc=.75 Fc=.5 Cje=73.39p Mje=.3777 Vje=.75 Tr=1.476n Tf=641.9p Itf=0 Vtf=0 Xtf=0 Rb=10) 2N5401 / MMBT5401 PNP General Purpose Amplifier (continued) Typical Characteristics VCESAT- COLLE CTOR-EMITTER VOLTAGE (V) h FE - TYP I

File name Bash 640023 Rev1.pdf

tan C3 100nF tan C4 100nF CN1 Q3 Not Used 0V 1% 1/4 R20 22 1% 1/4 R18 432 50V C13 47µF T1 1:1 R6 10K R7 10K R35 10K R5 36.5K Maylar C9 4700pF 1N5245B 15V Z5 U1 % 1/4 R19 432 1N5245B 15V Z4 IRF740 Q5 tantalum C5 100nF MEF 250 C21 0.1pF Zero Ohm Link R33 1 MPSA92 pnp Q6 1% 1% 1/4 1/4 R24 R23 1K 205K 1 % 1w D5 R22 47K D8 tan C11 0.1pF T2 1:1 1N4746A Z1 50V C12 47µF D7 D6 R4 100 63V C6 2200µF R25 0.5 T4 1:1 tantalum C2 1000pF R43 0.5 R42 0.5 tantalum C18 100nF ER1602 D3 U15A20 D1 R41 0.5 R40 0.5 R36 10 R37 1K 2N4401 NPN Q7 63V C7 22µF R8 1K 2N4401 NPN Q2 metal film polyestor C10 6.8µF SDIAC ? DIAC? R29 34K 200V C19 680µF 200V C20 680µF 1% 1/4 R30 150K MEF 250 C22 0.1pF IRF740 Q4 D4 R16 432 1/4 1N5245B 15V Z2 T3 1:1 1N5245B 15V Z3 INDUCTOR L3 L2 1H INDUCTOR L1 R3 10 MEF 250V C24 0.1pF MEF 250v C25 0.1pF 1% 1/4 R17 22 Maylar C8 4700pF 1% 1/4 R15 432 D10 JC 472M 430v C16 472F R34 10 -t° DSP 104 R26 <--- Thermistor Inrush Current Limiter RFP/SUP/70N06 Q1 DC IN + S1 DC IN S2 0V 50 - 60V DC / + Bash Indigo 640023 Rev1

File name componant list.txt

Bash Indigo Rev1 psu Board R30 150K 1/4 WATT 5% R16-R15 432 OHM 1/4 WATT METAL FILM 1% R19-R18 432 OHM 1/4 WATT METAL FILM 1% R29 34K 1/2 WATT 5% R23 1K 1/4 WATT METAL FILM 1% R20-R17 22 OHM METAL FILM 1/4 1% R22 47K 1 WATT R8 1K OHM 1/2 WATT CARBON 5% Z2-Z3-Z4-Z5 1N5245B 15V 1/4 WATT ZENER Z1 1N4746A 18V 1/2 WATT ZENER C20-C19 200V 680UF ELECTROLITIC R33 ZERO OHM JUMPER R24 205K METAL FILM 1/4 WATT 1% R26 Inrush Current Limiter THERMISTER DSP104 D5-D8 21TFK8AV C8-C9 mylar 2A472J 0.0047UF 4.7NF 4700PF C10 LGU685K MER250 METAL FILM POLYESTER 6.8UF c21-C22-C25-C24 METAL FILM POLYESTOR MEF 250V .1K = 0.1pf 0.0001nf 1.0000000000uf Q4-Q5 IRF740 400V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Q6 MPSA92 PNP TRANSISTER HIGH VOLTAGE D1 MOSPEC U15A20 FAST RECTIFIER DIODE (15A,50-200V) D3 PEC 130 ER1602 16.0 AMP FAST RECOVERY RECTIFIER Q1 RFP70N06 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs Q2-Q3 2N4401 NPN GENERAL PURPOSE

File name ER1602.pdf

ER1600 THRU ER1604 SUPERFAST RECOVERY RECTIFIERS VOLTAGE - 50 to 400 Volts CURRENT - 16.0 Amperes FEATURES l Plastic package has Underwriters Laboratory TO-220AB Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound l l l l l l Exceeds environmental standards of MIL-S-19500/228 Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times, high voltage Dual rectifier (Epitaxial chip) construction MECHANICAL DATA Case: TO-220AB molded plastic Terminals: Leads, solderable per MIL-STD-202, Method 208 Polarity: As marked Mounting Position: Any Weight: 0.08 ounces, 2.24 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, Resistive or inductive load. For capacitive load, derate current by 20%. ER1600 ER1601 ER1601A ER1602 ER1603 ER1604 UNITS V V V A A Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at TC=90 Peak Forward Surge Current, 8.3ms single half sine-wave superimposed on rated load(JEDEC method) 50 35 50 100 70 100 150 105 150 16.0 125 0.95 10 500 85 35 200 140 200 300 210 300 400 320 400 Maximum Forward Voltage at 8.0A per element Maximum DC Reverse Current at Ta=25 DC Blocking Voltage per element Ta=125 Typical Junction capacitance (Note 1) Maximum Reverse Recovery Time(Note 2) Typical Junction Resistance(Note 3) R JC Operating and Storage Temperature Range TJ 1.30 V A PF 50 3.0 -55 to +150 ns /W NOTES: 1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC 2. Reverse Recovery Test Conditions: IF=.5A, IR=1A, Irr=.25A 3. Thermal resistance junction to CASE RATING AND CHARACTERISTIC CURVES ER1600 THRU ER1604 Fig. 1-FORWARD CURRENT DERATING CURVE Fig. 2-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTIC Fig. 3-TYPICAL REVERSE Fig. 4-MAXIMUM NON-REPETITIVE SURGE CURRENT CHARACTERISTICS Fig. 5-TYPICAL JUNCTION CAPACITANCE

File name HC1011.pdf

Bash HC1011 PWM Current Controller Module D5 MMBT5551 160v npn Q1 R2 R3 39K 46K C4 1µF R1 10K D2 R15 10K C1 1µF fuse R12 fuse R11 1 C6 1µF 2LN-MMBT5401 PNP Q2 R9 1K R8 1K C5 1µF fuse R13 3 2XY-MMBT4401 NPN 2LN-MMBT5401 PNP D6 L1 1H Q3 Q4 R10 500 R21 1.5K R18 2K C2 1µF R14 10K R16 40K 1 2 3 4 5 6 7 14 13 12 11 10 9 8 C3 1µF UC3842AD IC1 C7 1µF D3 R7 500 R4 20K R6 1K D4 R19 20K D1 R5 1K 2XY-MMBT4401 NPN Q5 R17 500 R20 7.5K C8 1µF U1 ------> CN1 <-- Solder track back of module All Capacitor Values Unknown at present Diode types Unknown All Surface Mount Componants Board Dimensions 1.5 in X 1 in Actual Resistor Readings taken with Digital Meter R5 - R6 496 OHM R4 19.9K R10 - R7 496 OHM R15 - 10.2K R14 - 10.4K R16 - 39.6K R20 - 7.75K R21 - 1.5K R9 - 1.03K R8 - 1K R2 - 39K R3.46.5K R11 - R12 - R13 - ZERO OHMS FUSES R18 - 1.9K R17 - 469 OHM SMD TRANSISTOR MARKINGS Q1 3S = MMBT5551 NpN Q2 - Q4 2LN = MMBT5401 PnP Q3 - Q5 2XY = MMBT4401 NpN

File name insurge current limiter dsp104_detail.pdf

Diing Tai Electronics Co. Ltd Page 1 of 1 Disc Diameter (mm) 05DSP-052 5 05DSP-101 05DSP-20X 08DSP-053 8 08DSP-082 08DSP-102 08DSP-201 10DSP-2R55A 10DSP-034 10DSP-044 10DSP-054 10 10DSP-083 10DSP-103 10DSP-122 10DSP-162 10DSP-801 10DSP-1201 13DSP-2R55 13DSP-2R56 13 13DSP-055 13DSP-084 13DSP-104 15DSP-1R38 15DSP-2R58 15DSP-037 15 15DSP-056 15DSP-075 15DSP-105 15DSP-164 15DSP-204 20DSP-0120 20DSP-2R512 20DSP-2R515 20 20DSP-058 20DSP-0510 20DSP-0512 20DSP-0515 20DSP-108 Type No. Rated Zero Power Resistance at 25) 5 10 20 5 8 10 20 2.5 3 4 5 8 10 12 16 80 120 2.5 2.5 5 8 10 1.3 2.5 3 5 7 10 16 20 1 2.5 2.5 5 5 5 5 10 Max steady State Current at 25 (A) 2 1 0.5 3 2 2 1 5 4 4 4 3 3 2 2 1 1 5 6 5 4 4 8 8 7 6 5 5 4 4 20 12 15 8 10 12 15 8 25 Ambient Approx Resistance at Max Current () 0.431 1.209 3.070 0.314 0.477 0.529 1.570 0.119 0.160 0.170 0.170 0.307 0.380 0.583 0.628 2.386 2.486 0.114 0.087 0.143 0.202 0.222 0.088 0.081 0.106 0.130 0.181 0.199 0.291 0.306 35m 70 45 90 80 75 56 120 Thermal dissipation Constant (mW/) 14 13 15 15 14 14 15 15 20 19 16 14 16 15 15 17 19 18 18 17 16 15 23 20 22 22 21 20 20 20 31 30 30 30 30 26 28 30 Thermal time Constant (Sec.) 17 19 17 35 40 37 38 48 41 48 49 57 46 46 58 51 52 67 67 66 68 77 41 78 90 85 79 93 80 77 110 110 110 100 125 120 125 100 B value (°K) 2600 2600 2800 2500 2700 2800 2900 2600 2600 2600 2600 2900 2900 2900 2900 3500 3600 2600 2600 2800 2800 2900 2600 2800 2600 2900 3000 3000 3100 3100 2800 2800 2800 2800 2800 2800 2800 2800 Operating Temp. () UL/CSA safety -40 ~ +150 Y Y Y Y Y Y -40 ~ +170 Y Y Y Y Y Y Y -40 ~ +200 Y Y Y Y Y -40 ~ +200 Y Y Y Y Y -40 ~ +270 http://www.diing-tai.com.tw/dsp_detail.htm 28/03/2008

File name insurge current limiter NTC Thermistor.PDF

AMWEI Thermistor Co -PTC NTC Thermistor, Temperature Sensor Probe, Self-regulating Heater, China Manufacturer MAIN | PRODUCTS | ABOUT US | CONTACT US / Product Search Product Sort: PTC Thermistor / NTC Thermistor PTC Thermistor Keyword: Go Technical Information NTC Thermistor Glossary and Definitio... Selection Reference In... RT Table Application Precaution... Manufacturing Process... PTC Thermistor Structure and Function... Glossary and Definitio... Characteristics... Selection Reference... Application Precaution... Manufacturing Process ... Inrush Current Limiting Power NTC Thermistor Description Power NTC thermistor can be a cost effective device to limit the amount of inrush current in a switching power supply or other devices when the power is first turned on. Power NTC thermistor limits surge current by functioning as a power resistor which drops from a high cold resistance to a low hot resistance when heated by the current flowing through it. Inrush-current limiters power NTC thermistor protect circuits from undesirably high currents, suppressing high inrush current surges, while its resistance remains negligible low during continuous operation. Thanks to their low resistance in the operating state, Power thermistor have a considerably lower power dissipation than the fixed resistors frequently used for this application. Inrush Current Limiting Power NTC Thermistor Application limiting surge current, suitable for the protection of switch mode power supply, UPS power, various electric heating utensil, energy saving lights, ballast, various power circuit, colored displayer, filament protection, etc. Power thermistor components can also be used for the soft starting of motors, for example in vacuum cleaners with continuous currents of up to 20 A. Inrush Current Limiting Power NTC Thermistor Features: ·Suitable for both AC and DC circuits up to a voltage of 265 V(rms). ·Resin coated leaded thermistor disks. ·Wide range of resistance, current and dimension. http://www.amwei.com/views.asp?hw_id=64 (1 of 4)28/03/2008 21:19:00 AMWEI Thermistor Co -PTC NTC Thermistor, Temperature Sensor Probe, Self-regulating Heater, China Manufacturer Load-temperature characteristics Comparison curve with and without power NTC thermistor application Typical Application of Inrush Current Limiting Power NTC thermistor for Circuit Protection Dimensions (mm) AMWEI Inrush Current Limiting Power NTC Thermistor Data Sheet Part No. R25 () Max Stable Current http://www.amwei.com/views.asp?hw_id=64 (2 of 4)28/03/2008 21:19:00 Approx. Resistance Value at Dissipation Factor (mW/ oC) Thermal Time Constant Dimensions (mm) AMWEI Thermistor Co -PTC NTC Thermistor, Temperature Sensor Probe, Self-regulating Heater, China Manufacturer (A) Maximum Current () (s) D±2 Tmax H H0 d±1 AMF72-10D5 AMF72-200D5 AMF72-5D7 AMF72-10D7 AMF72-22D7 AMF72-5D9 AMF72-8D9 AMF72-10D9 AMF72-22D9 AMF72-5D11 AMF72-10D11 AMF72-16D11 AMF72-30D11 AMF72-5D13 AMF72-10D13 AMF72-

File name irf740.pdf

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.

File name MCC_SMD_Marking_Codes.pdf

Micro Commercial Components Corp. Marking Code For MCC's SMD Devices PN# 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR 2SA1162-O 2SA1162-Y 2SA1201-O 2SA1201-Y 2SA1213-O 2SA1213-Y 2SA1576A-Q 2SA1576A-R 2SA1576A-S 2SA1577-P 2SA1577-Q 2SA1577-R 2SA1736 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7 2SB1073-Q 2SB1073-R 2SB1132-P 2SB1132-Q 2SB1132-R 2SB1188-P 2SB1188-Q 2SB1188-R 2SB1197-P 2SB1197-Q 2SB1197-R 2SB1260-P 2SB1260-Q Package Type SOD-123 SOD-323 SOD-523 SOD-123 SOD-323 SOD-523 SOD-123 SOT-23 SOT-23 SOT-23 SOT-23 SOD-323 SOD-323 SOD-523 SOD-523 SOD-323 SOT-23 SOT-363 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-89 SOT-89 SOT-89 SOT-89 SOT-323 SOT-323 SOT-323 SOT-323 SOT-323 SOT-323 SOT-89 SOT-23 SOT-23 SOT-23 SOT-23 SOT-89 SOT-89 SOT-89 SOT-89 SOT-89 SOT-89 SOT-89 SOT-89 SOT-23 SOT-23 SOT-23 SOT-89 SOT-89 Marking Code T4 T4 T4 T5 T5 T5 5D A3 B3 F3 C3 A S31 S4 A S51 S72/7002 K72 FQ FR FS SG SO SY DO DY NO NY FQ FR FS HP HQ HR LD M4 M5 M6 M7 IQ IR BAP BAQ BAR BCP BCQ BCR AHP AHQ AHR ZL ZL 2SB1260-R 2SB1308-P 2SB1308-Q 2SB1308-R 2SC1623-L4 2SC1623-L5 2SC1623-L6 2SC1623-L7 2SC2412-Q 2SC2412-R 2SC2412-S 2SC2712-BL 2SC2712-GR 2SC2712-O 2SC2712-Y 2SC2881-O 2SC2881-Y 2SC4081-Q 2SC4081-R 2SC4081-S 2SC4617-Q 2SC4617-R 2SC4617-S 2SC4672-P 2SC4672-Q 2SD1898 2SD874-Q 2SD874-R 2SD874-S BAR43 BAR43A BAR43C BAR43S BAS116 BAS16 BAS16T BAS16TW BAS16V BAS16W BAS16WT BAS16WX BAS16X BAS19 BAS19WT BAS20 BAS20WT BAS21 BAS21A BAS21C BAS21S BAS21T BAS21WT BAS21WX BAS40 BAS40-04 BAS40-04T SOT-89 SOT-89 SOT-89 SOT-89 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-89 SOT-89 SOT-323 SOT-323 SOT-323 SOT-523 SOT-523 SOT-523 SOT-89 SOT-89 SOT-89 SOT-89 SOT-89 SOT-89 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-523 SOT-363 SOT-563 SOD-123 SOT-323 SOD-323 SOD-523 SOT-23 SOT-323 SOT-23 SOT-323 SOT-23 SOT-23 SOT-23 SOT-23 SOT-523 SOT-323 SOD-323 SOT-23 SOT-23 SOT-523 ZL BFP BFQ BFR L4 L5 L6 L7 BQ BR BS LL LG LO LY CO1 CY1 BQ BR BS BQ BR BS DKP DKQ DF ZQ ZR ZS R95 RB1 RB2 RA5 JV A6 A2 KA2 KAM A6/T6 A2 A6/T4 A6 JP KA8 JR KT2 JS JS2 JS3 JS4 T3 KT3 JS 43 44 44 BAS40-05 BAS40-05T BAS40-06 BAS40-06T BAS40BRW BAS40DW-04 BAS40DW-05 BAS40DW-06 BAS40T BAS40TW BAS40V BAS40WT BAS40WT-04 BAS40WT-05 BAS40WT-06 BAS40WX BAS70 BAS70-04 BAS70-04T BAS70-05 BAS70-05T BAS70-06 BAS70-06T BAS70BRW BAS70DW-04 BAS70DW-05 BAS70DW-06 BAS70T BAS70TW BAS70WT BAS70WT-04 BAS70WT-05 BAS70WT-06 BAS70WX BAT42W BAT42WS BAT43W BAT43WS BAT54 BAT54A BAT54ADW BAT54AT BAT54AWT BAT54BRW BAT54C BAT54CDW BAT54CT BAT54CWT BAT54DW BAT54S BAT54SDW BAT54ST BAT54SWT BAT54T BAT54TW BAT54V SOT-23 SOT-523 SOT-23 SOT-523 SOT-363 SOT-363 SOT-363 SOT-363 SOT-523 SOT-363 SOT-563 SOT-323 SOT-323 SOT-323 SOT-323 SOD-323 SOT-23 SOT-23 SOT-523 SOT-23 SOT-523 SOT-23 SOT-523 SOT-363 SOT-363 SOT-363 SOT-363 SOT-523 SOT-363 SOT-323 SOT-323 SOT-323 SOT-323 SOD-323 SOD-123 SOD-3

File name Module Back Pcb.pdf

File name Module Front Pcb.pdf

File name Module Pcb.pdf

Q1 10 9 8 18 Q2 D 17 16 15 D Fuse Fuse 11 2 3 Q3 Q4 4 D 5 7 6 D D 12 13 14 Q5 Fuse D 1 1 = 1.5k ohm 2 = 1k ohm 3 = 1k ohm 4 = 500 ohm 5 = 500 ohm 6 = 1k ohm 7 = 1k ohm 8 = 20k ohm 9 = 39k ohm 10 = 46k ohm 11 = 2k ohm 12 = 470 ohm 13 = 7.5k ohm 14 = 20k ohm 15 = 10k ohm 16 = 39k ohm 17 = 10k ohm 18 = 10k ohm

File name PMBT5401_4.pdf

DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 PMBT5401 PNP high-voltage transistor Product specification Supersedes data of 1999 Apr 15 2004 Jan 21 Philips Semiconductors Product specification PNP high-voltage transistor FEATURES · Low current (max. 300 mA) · High voltage (max. 150 V). APPLICATIONS · Switching and amplification in high voltage applications such as telephony. DESCRIPTION PNP high-voltage transistor in a SOT23 plastic package. NPN complement: PMBT5550. MARKING TYPE NUMBER PMBT5401 Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. ORDERING INFORMATION TYPE NUMBER PMBT5401 PACKAGE NAME - DESCRIPTION plastic surface mounted package; 3 leads MARKING CODE(1) *2L Top view handbook, halfpage PMBT5401 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 1 2 MAM256 Fig.1 Simplified outline (SOT23) and symbol. VERSION SOT23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C; note 1 CONDITIONS open emitter open base open collector - - - - - - - -65 - -65 MIN. MAX. -160 -150 -5 -300 -600 -100 250 +150 150 +150 UNIT V V V mA mA mA mW °C °C °C 2004 Jan 21 2 Philips Semiconductors Product specification PNP high-voltage transistor THERMAL CHARACTERISTICS SYMBOL Rth(j-a) Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector-base cut-off current emitter-base cut-off current DC current gain CONDITIONS IE = 0; VCB = -120 V IE = 0; VCB = -120 V; Tamb = 150 °C IC = 0; VEB = -4 V VCE = -5 V; (see Fig.2) IC = -1 mA IC = -10 mA IC = -50 mA VCEsat VBEsat Cc fT F collector-emitter saturation voltage base-emitter saturation voltage collector capacitance transition frequency noise figure IC = -10 mA; IB = -1 mA IC = -50 mA; IB = -5 mA IC = -10 mA; IB = -1 mA IC = -50 mA; IB = -5 mA IE =Ie = 0; VCB = -10 V; f = 1 MHz IC = -10 mA; VCE = -10 V; f = 100 MHz; Tamb = 25 °C IC = -200 µA; VCE = -5 V; RS = 2 k; f = 10 Hz to 15.7 kHz; Tamb = 25 °C 50 60 50 - - - - - 100 - - - - MIN. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 PMBT5401 VALUE 500 UNIT K/W MAX. -50 -50 -50 - 240 - -200 -500 -1 -1 6 300 8 UNIT nA µA nA mV mV V V pF MHz dB 2004 Jan 21 3 Philips Semiconductors Product specification PNP high-voltage transistor PMBT5401 handbook, full pagewidth 200 MGD813 hFE 150 VCE = -5 V 100 50 0 -10-1 -1 -10 -102 IC mA -103 Fig.2 DC current gain; typical values. 2004 Jan 21 4 Philips Semiconductors Product specification PNP high-voltage transistor PACKAGE OUTLINE Pl

File name RFP70N06 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs.pdf

RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Data Sheet January 2002 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA78440. Features · 70A, 60V · rDS(on) = 0.014 · Temperature Compensated PSPICE® Model · Peak Current vs Pulse Width Curve · UIS Rating Curve (Single Pulse) · 175oC Operating Temperature · Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Ordering Information PART NUMBER RFG70N06 RFP70N06 RF1S70N06 RF1S70N06SM PACKAGE TO-247 TO-220AB TO-262AA TO-263AB BRAND RFG70N06 RFP70N06 F1S70N06 F1S70N06 Symbol D G S NOTE: When ordering use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, e.g. RF1S70N06SM9A. Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (BOTTOM SIDE METAL) GATE SOURCE DRAIN (FLANGE) JEDEC TO-263AB JEDEC TO-220AB SOURCE DRAIN GATE JEDEC TO-262AA SOURCE DRAIN GATE DRAIN (FLANGE) DRAIN (FLANGE) ©2002 Fairchild Semiconductor Corporation RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Rev. C RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFG70N06, RFP70N06 RF1S70N06, RF1S70N06SM 60 60 70 Refer to Peak Current Curve ±20 Refer to UIS Curve 150 1.0 -55 to 175 300 260 UNITS V V A V A W W/oC oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . .TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg CAUTION: Stresses above those listed in "Absolute Maximum Ratings"

File name u15a20 FAST RECTIFIERS(15A,50-200V).pdf