mitsubitshi transistor free download

File name 2sc1970.pdf

2SC1970 Page 1 of 2 2SC1970 Silicon NPN Transistor RF Power Output The 2SC1970 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. WINTransceiver BEC Features: High Power Gain: Gpe >/= 9,2dB (VCC = 13.5V, PO = 6W, f = 175MHz) Application: 0,8 to 1 Watt Output Power Amplifier Applications in VHF Band Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector-Emitter Voltage (RBE = Infinity), VCEO Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Collector Power Dissipation (TA = +25°C), PD Collector Power Dissipation (TC = +50°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg Thermal Resistance, Junction-to-Case, RthJC Thermal Resistance, Junction-to-Ambient, RthJA 17V 35V 4V 0,6A 1W 5W +150°C -55° to +150°C 25°C/W 125#176;C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Symbol Test Conditions Min Typ Max Unit 40 17 V V V(BR)CBO IC = 5mA, IE = 0 Collector-Emitter Breakdown Voltage V (BR)CEO IC = 50mA, RBE = Infinity http://malzev.tripod.com/comp/2sc1970.htm 7/10/2008 2SC1970 Page 2 of 2 Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Forward Current Gain Power Output Collector Efficiency V(BR)EBO IE = 1mA, IC = 0 ICBO IEBO hFE PO VCB = 25V IE = 0 VEB = 3V, IC = 0 VCE = 10V, IC = 100mA, Note 1 VCC = 13.5V, Pin = 600mW, f = 175MHz 4 10 1 50 50 1,2 60 - V 100 µA 100 µA 180 W % Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%. CB Radio Banner Exchange http://malzev.tripod.com/comp/2sc1970.htm 7/10/2008