FUSI 2SK2645-01MR free download

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2SK2645-01MR FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 600V 1,2 9A 50W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings ( T C=25°C), unless otherwise specified > Equivalent Circuit Rating 600 9 32 ±30 9 71,9 50 150 -55 ~ +150 Unit V A A V A mJ W °C °C Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Repetitive or Non-Repetitive (Tch 150°C) Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS I AR E AS PD T ch T stg - Electrical Characteristics (TC=25°C), Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge unless otherwise specified Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Test conditions ID=1mA VGS =0V ID=1mA VDS= VGS VDS=600V Tch =25°C VGS=0V Tch=125°C VGS =±30V VDS=0V ID=4A VGS =10V ID=4A VDS=25V VDS=25V VGS =0V f=1MHz VCC=300V ID=9A VGS=10V RGS=10 Tch =25°C L = 100µH IF=2xI DR VGS =0V T ch =25°C IF=IDR V GS =0V -dI F/dt=100A/µs T ch =25°C Min. 600 3,5 Typ. 4,0 10 0,2 10 1,0 5 900 150 70 25 70 60 35 1,0 550 7,0 Max. 4,5 500 1,0 100 1,2 1400 230 110 40 110 90 60 1,5 2,5 9 Unit V V µA mA nA S pF pF pF ns ns ns ns A V ns µC - Thermal Characteristics Item Thermal Resistance Symbol R th(ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 62,5 2,5 Unit °C/W °C/W Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98 N-channel MOS-FET 600V 1,2 2SK2645-01MR FAP-IIS Series Drain-Source On-State Resistance vs. Tch RDS(on) = f(Tch); ID=4A; VGS=10V 9A 50W > Characteristics Typical Output Characteristics ID=f(VDS); 80µs pulse test; TC=25°C Typical Transfer Characteristics ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C ID [A] RDS(ON) [] 2 ID [A] 1 3 VDS [V] Tch [°C] VGS [V] Typical Drain-Source On-State-Resistance vs. ID RDS(on)=f(ID); 80µs pulse test; TC=25°C Typical Forward Transconductance vs. ID gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C Gate Threshold Voltage vs. Tch VGS(th)=f(Tch); ID=1mA; VDS=VGS RDS(ON) [] gfs [S] 5 VGS(th) [V] 4 6 ID [A] ID [A] Tch [°C] Typical Capacitances vs. VDS C=f(VDS); VGS=0V; f=1MHz Typical Gate Charge Characteristic VGS=f(Qg); ID=9A; Tc=25°C Forward Characteristics of Reverse Di